TUTDoR

Aharoni, H.

Showing items 1 - 3 of 3.

Add to Quick Collection   All 3 Results

  • First
  • Previous
  • 1
  • Next
  • Last
Sort:
 Add All Items to Quick Collection
Date: 2007/04/24
Language: en
Type: Text
Identifier: tut:4993
Description: In this paper, we report on an increase in emission intensity of up to 10 nW/mm2 that has been realized with a new novel two junction, diagonal avalanche control, and minority carrier injection silico ... More
Full Text: Full Text
Date: 2005/10/10
Language: en
Type: Text
Identifier: tut:4994
Description: A dependency of quantum efficiency of nn+ pp+ sil- icon complementary metal–oxide–semiconductor integrated light- emitting devices on the current density through the active device areas is demonstrate ... More
Full Text: Full Text
Date: 2004
Subject: Silicon | CMOS/BiCMOS IC
Language: en
Type: Text
Identifier: tut:3604
Description: Although silicon is an indirect bandgap material, light emission from reverse biased pn junctions has been observed. Although the quantum efficiency is low, it will be very advantageous to utilise the ... More
Full Text: Full Text
  • First
  • Previous
  • 1
  • Next
  • Last